A FinFET with one atomic layer channel

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Sub - 50 nm P - Channel FinFET

High-performance PMOSFETs with sub-50–nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-...

متن کامل

Anodic Aluminum Oxide Templated Channel Electrodes via Atomic Layer Deposition

Dye-sensitized solar cells (DSSCs) utilize high surface area metal oxide sintered particle networks to absorb molecular dyes and transport injected charge carriers. While this sintered particle architecture allows liquid electrolyte DSSCs to achieve efficiencies up to 11%, slow charge transport through the semiconductor network limits the amount of modification that can be made to the electroly...

متن کامل

MulCh: a multi-layer channel router using one, two, and three layer partitions

Multilayer routing is an important problem in the physical design of integrated circuits as technology evolves towards several layers of metallization. MulCh is a channel router accepting specification of an arbitrary number of routing layers. Though several other channel routers for three layers of interconnect have been proposed, the only previously reported practical implementation for an ar...

متن کامل

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

متن کامل

Threshold Voltage Roll-Off Due to Channel Length Reduction for a Nanoscale n-channel FinFET

Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nature Communications

سال: 2020

ISSN: 2041-1723

DOI: 10.1038/s41467-020-15096-0